Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si.
| Autor: | Van den Berg, J. A.1 j.a.vandenberg@salford.ac.uk, Reading, M. A.1, Armour, D. G.1, Carter, G.1, Zalm, P. C.1, Bailey, P.2, Noakes, T. C. Q.2 |
|---|---|
| Zdroj: | Radiation Effects & Defects in Solids. Jul/Aug2009, Vol. 164 Issue 7/8, p481-491. 11p. 5 Graphs. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
|