Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations.

Autor: Köksal, K.1 Koraykoksal@yahoo.com, Gönül, B.1, Oduncuoğlu, M.2
Zdroj: European Physical Journal B: Condensed Matter. May2009, Vol. 69 Issue 2, p211-218. 8p. 2 Charts, 4 Graphs.
Databáze: Academic Search Ultimate