Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide.
| Autor: | Zhdan, A. G.1, Naryshkina, V. G.1, Chucheva, G. V.1 gvc@ms.ire.rssi.ru |
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| Zdroj: | Semiconductors. May2009, Vol. 43 Issue 5, p677-679. 3p. 3 Graphs. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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