Optical properties of the Si-doped GaN/Al2O3 films.

Autor: Zayats, N. S.1, Gentsar, P. O.1 gentsar@isp.kiev.ua, Boiko, V. G.1, Litvin, O. S.1, Vuychik, M. V.1, Stronski, A. V.1, Yanchuk, I. B.1
Zdroj: Semiconductors. May2009, Vol. 43 Issue 5, p590-593. 4p. 5 Graphs.
Databáze: Academic Search Ultimate