Properties of reactively sputtered W–B–N thin film as a diffusion barrier for Cu metallization on Si.
Autor: | Leu, L.1, Norton, D.1 dnort@mse.ufl.edu, McElwee-White, L.2, Anderson, T.3 |
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Zdroj: | Applied Physics A: Materials Science & Processing. Mar2009, Vol. 94 Issue 3, p691-695. 5p. 1 Black and White Photograph, 1 Chart, 4 Graphs. |
Databáze: | Academic Search Ultimate |
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