Properties of reactively sputtered W–B–N thin film as a diffusion barrier for Cu metallization on Si.

Autor: Leu, L.1, Norton, D.1 dnort@mse.ufl.edu, McElwee-White, L.2, Anderson, T.3
Zdroj: Applied Physics A: Materials Science & Processing. Mar2009, Vol. 94 Issue 3, p691-695. 5p. 1 Black and White Photograph, 1 Chart, 4 Graphs.
Databáze: Academic Search Ultimate