Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.
| Autor: | Samsonenko, Yu. B.1,2,3 samsonenko@beam.ioffe.ru, Cirlin, G. É1,2,3, Egorov, V. A1,3, Polyakov, N. K.1,2,3, Ulin, V. P.2, Dubrovskii, V. G.2,3 |
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| Zdroj: | Semiconductors. Dec2008, Vol. 42 Issue 12, p1445-1449. 5p. 4 Black and White Photographs, 2 Graphs. |
| Databáze: | Academic Search Ultimate |
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