Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1−x Si x /Si(100) materials using nanoscale building blocks
| Autor: | Fang, Y.-Y.1 yfang6@asu.edu, D’Costa, V.R.2 vdcosta@asu.edu, Tolle, J.1 john.tolle@asu.edu, Tice, J.B.1 jesse.tice@asu.edu, Poweleit, C.D.2 christian.poweleit@asu.edu, Menéndez, J.2 jose.menendez@asu.edu, Kouvetakis, J.1 john.kouvetakis@asu.edu |
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| Zdroj: | Solid State Communications. Jan2009, Vol. 149 Issue 1/2, p78-81. 4p. |
| Databáze: | Academic Search Ultimate |
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