Influence of activation of Si29+ ion-implantation in GaAs on ohmic contact resistance and electrical performances of MESFETs.

Autor:	Saravanan, G. Sai1 sai_smrc@rediffmail.com, Bhat, K. Mahadeva1, Vyas, H. P.2, Muraleedharan, K.3, Pathak, A. P.4
Zdroj:	Radiation Effects & Defects in Solids. Sep2008, Vol. 163 Issue 9, p737-748. 12p. 2 Diagrams, 10 Graphs.
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