GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer.
| Autor: | Alekseev, A. N.1 support@semiteq.ru, Byrnaz, A. É.1, Krasovitskiĭ, D. M.1, Pavlenko, M. V.1, Petrov, S. I.1, Pogorel'skiĭ, Yu. V.1, Sokolov, I. A.1, Sokolov, M. A.1, Stepanov, M. V.1, Chalyĭ, V. P.1, Shkurko, A. P.1 |
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| Zdroj: | Technical Physics Letters. Sep2008, Vol. 34 Issue 9, p785-788. 4p. 3 Graphs. |
| Databáze: | Academic Search Ultimate |
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