Insights on trap generation and breakdown in ultra thin SiO2 and SiON dielectrics from low voltage stress-induced leakage current measurements

Autor: Nicollian, Paul E.1 nicollian@ti.com
Zdroj: Microelectronics Reliability. Aug2008, Vol. 48 Issue 8/9, p1171-1177. 7p.
Databáze: Academic Search Ultimate