Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates.
| Autor: | Alekseev, A. N.1 support@semiteq.ru, Aleksandrov, S. B.1, Byrnaz, A. É.1, Kokin, S. V.1, Krasovitskiĭ, D. M.1, Pavlenko, M. V.1, Petrov, S. I.1, Pogorel’skiĭ, M. Yu.1, Pogorel’skiĭ, Yu. V.1, Sokolov, I. A.1, Sokolov, M. A.1, Stepanov, M. V.1, Tkachenko, A. G.1, Chalyĭ, V. P.1, Shkurko, A. P.1 |
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| Zdroj: | Technical Physics Letters. Aug2008, Vol. 34 Issue 8, p711-713. 3p. 1 Black and White Photograph. |
| Databáze: | Academic Search Ultimate |
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