High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry
| Autor: | Jalabert, Laurent jalabert@laas.fr, Dubreuil, Pascal1, Carcenac, Franck1, Pinaud, Sébastien1, Salvagnac, Ludovic1, Granier, Hugues1, Fontaine, Chantal1 |
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| Zdroj: | Microelectronic Engineering. May2008, Vol. 85 Issue 5/6, p1173-1178. 6p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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