Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots
| Autor: | Richter, Mirja1,2 mirja.richter@rub.de, Reuter, Dirk1, Duboz, Jean-Yves2, Wieck, Andreas D.1 |
|---|---|
| Zdroj: | Physica E. Apr2008, Vol. 40 Issue 6, p1891-1893. 3p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
|
Full Text from ScienceDirect