Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots
Autor: | Richter, Mirja1,2 mirja.richter@rub.de, Reuter, Dirk1, Duboz, Jean-Yves2, Wieck, Andreas D.1 |
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Zdroj: | Physica E. Apr2008, Vol. 40 Issue 6, p1891-1893. 3p. |
Databáze: | Academic Search Ultimate |
Externí odkaz: |