Erbium ion electroluminescence in p ++/ n +/ n-Si:Er/ n ++ silicon diode structures.

Autor: Kuznetsov, V. P.1, Remizov, D. Yu.2, Shmagin, V. B.2 shm@ipm.sci-nnov.ru, Kudryavtsev, K. E.2, Shabanov, V. N.1, Obolensky, S. V.3, Belova, O. V.1, Kuznetsov, M. V.1, Kornaukhov, A. V.1, Andreev, B. A.2, Krasil'nik, Z. F.2
Zdroj: Semiconductors. Nov2007, Vol. 41 Issue 11, p1312-1314. 3p. 3 Graphs.
Databáze: Academic Search Ultimate