Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system.
| Autor: | Alekseev, A. N.1, Byrnaz, A. É1, Krasovitsky, D. M.1, Pavlenko, M. V.1, Petrov, S. I.1 support@semiteq.ru, Pogorel’sky, Yu. V.1, Sokolov, I. A.1, Sokolov, M. A.1, Stepanov, M. V.1, Shkurko, A. P.1, Chalyi, V. P.1 |
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| Zdroj: | Semiconductors. Sep2007, Vol. 41 Issue 9, p1005-1010. 6p. 1 Black and White Photograph, 1 Chart, 2 Graphs. |
| Databáze: | Academic Search Ultimate |
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