Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
| Autor: | Wei, T.B. tbwei@semi.ac.cn, Duan, R.F.1, Wang, J.X.1, Li, J.M.1, Huo, Z.Q.1, Ma, P.1, Liu, Zh.1, Zeng, Y.P.1 |
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| Zdroj: | Applied Surface Science. Jul2007, Vol. 253 Issue 18, p7423-7428. 6p. |
| Databáze: | Academic Search Ultimate |
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