Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000°C and temperature for minimum low-K interfacial oxide for high-K dielectric on Si

Autor:	Lau, W.S.1 ewslau@ntu.edu.sg, Qian, P.W.1, Han, Taejoon2, Sandler, Nathan P.2, Che, S.T.3, Ang, S.E.3, Tung, C.H.4, Sheng, T.T.4
Zdroj:	Microelectronics Reliability. Feb2007, Vol. 47 Issue 2/3, p429-433. 5p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect