Physics of semiconductors and dielectrics the mechanism of formation and properties of stratified-inhomogeneity defects in silicon.

Autor: Kulinich, O.1 eltech@elaninet.com
Zdroj: Russian Physics Journal. Mar2006, Vol. 49 Issue 3, p233-238. 6p. 6 Black and White Photographs, 3 Graphs.
Databáze: Academic Search Ultimate