Influence of hydrogen dilution and substrate temperature on growth of nanocrystalline hydrogenated silicon carbide films deposited by RF sputtering

Autor: Madani, M.1,2 madani1malek@yahoo.fr, Colder, H.3, Portier, X.3, Zellama, K.4, Rizk, R.3, Bouchriha, H.1
Zdroj: Microelectronics Journal. Oct2006, Vol. 37 Issue 10, p1031-1035. 5p.
Databáze: Academic Search Ultimate