Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface.
| Autor: | Parchinskiĭ, P.B.1 pavelphys@mail.ru, Vlasov, S.I.1, Ligaĭ, L.G.1 |
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| Zdroj: | Semiconductors. Jul2006, Vol. 40 Issue 7, p808-811. 4p. |
| Databáze: | Academic Search Ultimate |
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