A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures.

Autor: Zhdan, A. G.1, Chucheva, G. V.1 gvc@ms.ire.rssi.ru, Goldman, E. I.1
Zdroj: Semiconductors. Feb2006, Vol. 40 Issue 2, p190-196. 7p. 3 Graphs.
Databáze: Academic Search Ultimate