Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals.
| Autor: | Kachurin, G.A.1 kachurin@isp.nsc.ru, Cherkova, S.G.1, Volodin, V.A.1, Marin, D.M.1, Tetel’baum, D.I.2, Becker, H.3 |
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| Zdroj: | Semiconductors. Jan2006, Vol. 40 Issue 1, p72-78. 7p. 6 Graphs. |
| Databáze: | Academic Search Ultimate |
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