Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge
| Autor: | Lankinen, A.1 Aapo.Lankinen@hut.fi, Knuuttila, L.1, Tuomi, T.1, Kostamo, P.1, Säynätjoki, A.1, Riikonen, J.1, Lipsanen, H.1, McNally, P.J.2, Lu, X.2, Sipilä, H.3, Vaijärvi, S.3, Lumb, D.4 |
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| Zdroj: | Nuclear Instruments & Methods in Physics Research Section A. Jul2006, Vol. 563 Issue 1, p62-65. 4p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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