Characterisation of the Al2O3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H–SiC devices

Autor:	Wolborski, Maciej1 maciej@imit.kth.se, Bakowski, Mietek1,2, Ortiz, Armando3, Pore, Viljami4, Schöner, Adolf2, Ritala, Mikko4, Leskelä, Markku4, Hallén, Anders1
Zdroj:	Microelectronics Reliability. May2006, Vol. 46 Issue 5/6, p743-755. 13p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect