Characteristics of laser-produced Ge ion fluxes used for modification of semiconductor materials.
| Autor: | Wołowski, J.1 wolowski@ifpilm.waw.pl, Badziak, J.1, Czarnecka, A.1, Boody, F. P.2, Gammino, S.3, Krása, J.4, Láska, L.4, Mezzasalma, A.5, Parys, P.1, Rosiński, M.1, Rohlena, K.4, Torrisi, L.3,5, Ullschmied, J.4 |
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| Zdroj: | Radiation Effects & Defects in Solids. Oct2005, Vol. 160 Issue 10-12, p477-482. 6p. 1 Chart, 5 Graphs. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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