Taguchi Method Statistical Analysis on Characterization and Optimization of 18-nm Double Gate MOSFETs.

Autor: Maheran, A.H. Afifah1 afifah@utem.edu.my, Pritigavane, M.1, Nizam, N. H. N. M.1, Salehuddin, F.1, Sabani, N.2
Zdroj: International Journal of Nanoelectronics & Materials. Oct2024, Vol. 17 Issue 4, p549-555. 7p.
Databáze: Academic Search Ultimate