Reduction in Gap State Density near Valence Band Edge at Al2O3/p‐type GaN Interface by Photoelectrochemical Etching and Subsequent SiO2 Cap Annealing.

Autor:	Jiao, Yining1 (AUTHOR), Nukariya, Takahide1 (AUTHOR), Takatsu, Umi1 (AUTHOR), Narita, Tetsuo2 (AUTHOR), Kachi, Tetsu3 (AUTHOR), Sato, Taketomo1 (AUTHOR), Akazawa, Masamichi1 (AUTHOR) akazawa@rciqe.hokudai.ac.jp
Zdroj:	Physica Status Solidi (B). Nov2024, Vol. 261 Issue 11, p1-9. 9p.
Databáze:	Academic Search Ultimate
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