Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices.

Autor: Sadowski, Oskar1,2 (AUTHOR) oskar.sadowski@imif.lukasiewicz.gov.pl, Kamiński, Maciej1,2 (AUTHOR), Taube, Andrzej1 (AUTHOR) andrzej.taube@imif.lukasiewicz.gov.pl, Tarenko, Jarosław1,2 (AUTHOR), Guziewicz, Marek1 (AUTHOR), Wzorek, Marek1 (AUTHOR), Maleszyk, Justyna1 (AUTHOR), Jóźwik, Iwona1,3 (AUTHOR), Szerling, Anna1 (AUTHOR), Prystawko, Paweł4 (AUTHOR), Boćkowski, Michał4 (AUTHOR), Grzegory, Izabella4 (AUTHOR)
Zdroj: Physica Status Solidi. A: Applications & Materials Science. Nov2024, Vol. 221 Issue 21, p1-9. 9p.
Databáze: Academic Search Ultimate
Externí odkaz: