Mechanistic study of β-Ga2O3 nitridation by RF nitrogen plasma for GaN heteroepitaxy.
| Autor: | Landi, Matthew M.1 (AUTHOR), Kelly, Frank P.1 (AUTHOR), Vesto, Riley E.1 (AUTHOR), Kim, Kyekyoon1,2,3 (AUTHOR) kevinkim@illinois.edu |
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| Zdroj: | Journal of Applied Physics. 10/28/2024, Vol. 136 Issue 16, p1-12. 12p. |
| Databáze: | Academic Search Ultimate |
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