200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β-Ga2O3 epitaxial drift layers.

Autor:	Peterson, Carl1 (AUTHOR) carlpeterson@ucsb.edu, Bhattacharyya, Arkka1 (AUTHOR), Chanchaiworawit, Kittamet1 (AUTHOR), Kahler, Rachel1 (AUTHOR), Roy, Saurav1 (AUTHOR), Liu, Yizheng1 (AUTHOR), Rebollo, Steve1 (AUTHOR), Kallistova, Anna1 (AUTHOR), Mates, Thomas E.1 (AUTHOR), Krishnamoorthy, Sriram1 (AUTHOR) sriramkrishnamoorthy@ucsb.edu
Zdroj:	Applied Physics Letters. 10/28/2024, Vol. 125 Issue 18, p1-7. 7p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu