Epitaxial growth of GaN on β-Ga2O3 via RF plasma nitridation.
Autor: | Kelly, Frank P.1 (AUTHOR), Landi, Matthew M.1 (AUTHOR), Vesto, Riley E.1 (AUTHOR), Tadjer, Marko J.2 (AUTHOR), Hobart, Karl D.2 (AUTHOR), Kim, Kyekyoon1,3,4 (AUTHOR) kevinkim@illinois.edu |
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Zdroj: | Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-8. 8p. |
Databáze: | Academic Search Ultimate |
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