Epitaxial growth of GaN on β-Ga2O3 via RF plasma nitridation.

Autor: Kelly, Frank P.1 (AUTHOR), Landi, Matthew M.1 (AUTHOR), Vesto, Riley E.1 (AUTHOR), Tadjer, Marko J.2 (AUTHOR), Hobart, Karl D.2 (AUTHOR), Kim, Kyekyoon1,3,4 (AUTHOR) kevinkim@illinois.edu
Zdroj: Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-8. 8p.
Databáze: Academic Search Ultimate