An efficient device model for ferroelectric thin-film transistors.

Autor: Cheng, Guoting1 (AUTHOR), Feng, Philip X.-L.1 (AUTHOR), Guo, Jing1 (AUTHOR) guoj@ufl.edu
Zdroj: Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-10. 10p.
Databáze: Academic Search Ultimate