Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs.
| Autor: | Baokang Peng1, Yanxin Jiao1, Haotian Zhong1, Zhao Rong1, Zirui Wang2, Ying Xiao3, Waisum Wong1, Lining Zhang1 eelnzhang@pku.edu.cn, Runsheng Wang2 r.wang@pku.edu.cn, Ru Huang2 |
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| Zdroj: | Fundamental Research. Sep2024, Vol. 4 Issue 5, p1306-1313. 8p. |
| Databáze: | Academic Search Ultimate |
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