Recent progress of Ga2 O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method.

Autor: Zeyulin Zhang1, Pengru Yan1, Qingwen Song1,2 qwsong@xidian.edu.cn, Haifeng Chen3, Wentao Zhang4, Hao Yuan1, Fengyu Du1, Dinghe Liu1, Dazheng Chen1,2 dzchen@xidian.edu.cn, Yuming Zhang1
Zdroj: Fundamental Research. Sep2024, Vol. 4 Issue 5, p1292-1305. 14p.
Databáze: Academic Search Ultimate