The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology.
| Autor: | Chen, Jiawei1,2,3 (AUTHOR) chenjiawei18@mails.ucas.ac.cn, Yin, Yanan1,2,3 (AUTHOR), Yang, Weifeng2 (AUTHOR), Wang, Tao1,2,3 (AUTHOR), Duan, Xinpei1,2,3 (AUTHOR), Qiu, Yiwu1,2,3 (AUTHOR), Yang, Pei1,2,3 (AUTHOR), Zhang, Lili1,2,3 (AUTHOR), Zhou, Xinjie1,2,3 (AUTHOR) zhouxinjie2000@sina.com, Wang, You2 (AUTHOR) |
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| Zdroj: | Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. Oct2024, p1-11. 11p. 7 Illustrations. |
| Databáze: | Academic Search Ultimate |
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