Ultrathin LiF Insertion and Ensued Contact Resistance Reduction in MoS2 Channel Transistors.

Autor: Cho, Hyunmin1 (AUTHOR), Kang, Donghee1 (AUTHOR), Yi, Yeonjin1 (AUTHOR), Park, Ji Hoon2,3 (AUTHOR) semicon@pknu.ac.kr
Zdroj: Physica Status Solidi - Rapid Research Letters. Sep2024, Vol. 18 Issue 9, p1-6. 6p.
Databáze: Academic Search Ultimate
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