Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography.

Autor: Wen, Pengyan1,2 (AUTHOR), Xiu, Huixin3 (AUTHOR) huixin.xiu@usst.edu.cn, Zhang, Shuming4 (AUTHOR), Liu, Jianping4 (AUTHOR), Chen, Yimeng5 (AUTHOR), Yang, Hui4 (AUTHOR)
Zdroj: Journal of Applied Physics. 7/28/2024, Vol. 136 Issue 4, p1-7. 7p.
Databáze: Academic Search Ultimate