Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET.
| Autor: | Poobalan, Banu1,2 banu@unimap.edu.my, Hashim, Nuralia Syahida1, Natarajan, Manikandan3, Abd Rahim, Alhan Farhanah4 |
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| Zdroj: | Journal of Engineering & Technological Sciences. 2024, Vol. 56 Issue 3, p367-376. 10p. |
| Databáze: | Academic Search Ultimate |
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