Temperature Characterization and Performance Enhancement of a 7nm FinFET Structure Using HK Materials and GaAs as Metal Gate (MG).
Autor: | Muqeet, Mohammed Abdul1 abdulmqt19@gmail.com, Babu, Tummala Ranga2 |
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Zdroj: | International Journal of Nanoelectronics & Materials. Jul2024, Vol. 17 Issue 3, p355-361. 7p. |
Databáze: | Academic Search Ultimate |
Externí odkaz: |