Temperature Characterization and Performance Enhancement of a 7nm FinFET Structure Using HK Materials and GaAs as Metal Gate (MG).

Autor: Muqeet, Mohammed Abdul1 abdulmqt19@gmail.com, Babu, Tummala Ranga2
Zdroj: International Journal of Nanoelectronics & Materials. Jul2024, Vol. 17 Issue 3, p355-361. 7p.
Databáze: Academic Search Ultimate