Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC.
| Autor: | Kozakai, Shota1 (AUTHOR) kozakai@semicon.kuee.kyoto-u.ac.jp, Fujii, Haruki1 (AUTHOR), Kaneko, Mitsuaki1 (AUTHOR), Kimoto, Tsunenobu1 (AUTHOR) |
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| Zdroj: | Journal of Applied Physics. 9/7/2024, Vol. 136 Issue 9, p1-11. 11p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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