MoS2/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters.

Autor: Zhou, Yao1 (AUTHOR), Li, Fei1 (AUTHOR), Li, Wenfeng1 (AUTHOR), Chen, Jianru1 (AUTHOR), Gao, Jiahao1 (AUTHOR), Huang, Jianming1 (AUTHOR), Zhao, Liang1 (AUTHOR), Zhao, Tu1 (AUTHOR), Li, Jiabin1 (AUTHOR), Zheng, Tao1 (AUTHOR), Pan, Zhidong1 (AUTHOR), Zheng, Zhaoqiang2 (AUTHOR), Huo, Nengjie1 (AUTHOR), Luo, Dongxiang3 (AUTHOR), Yang, Mengmeng1 (AUTHOR), Wang, Xingfu1 (AUTHOR), Chen, Wenlong4 (AUTHOR) chenwl6740@gzfenxi.com, Sun, Yiming1 (AUTHOR) yimingsun@m.scnu.edu.cn, Gao, Wei1 (AUTHOR) gaowei317040@m.scnu.edu.cn
Zdroj: Advanced Functional Materials. Sep2024, p1. 12p. 7 Illustrations.
Databáze: Academic Search Ultimate
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