Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD.
| Autor: | Ueda, Ryo1 (AUTHOR), Nishinaka, Hiroyuki2 (AUTHOR) nisinaka@kit.ac.jp, Miyake, Hiroki3,4 (AUTHOR), Yoshimoto, Masahiro2 (AUTHOR) |
|---|---|
| Zdroj: | AIP Advances. Aug2024, Vol. 14 Issue 8, p1-7. 7p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
|