Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon.

Autor:	Liu, Shangfeng1 (AUTHOR), Ratiu, Bogdan-Petrin1 (AUTHOR), Jia, Hui2 (AUTHOR), Yan, Zhao1 (AUTHOR), Wong, Ka Ming1 (AUTHOR), Martin, Mickael3 (AUTHOR), Tang, Mingchu2 (AUTHOR), Baron, Thierry3 (AUTHOR), Liu, Huiyun2 (AUTHOR), Li, Qiang1 (AUTHOR) LiQ44@cardiff.ac.uk
Zdroj:	Applied Physics Letters. 8/19/2024, Vol. 125 Issue 8, p1-5. 5p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu