HfO2-based resistive random access memory with an ultrahigh switching ratio.
| Autor: | Pan, Jinyan1 (AUTHOR), He, Hongyang1 (AUTHOR), Huang, Qiao1 (AUTHOR), Gao, Yunlong2 (AUTHOR), Lin, Yuxiang1 (AUTHOR), He, Ruotong1 (AUTHOR) ruotonghe@jmu.edu.cn, Chen, Hongyu3 (AUTHOR) chenhyu@jmu.edu.cn |
|---|---|
| Zdroj: | Journal of Applied Physics. 8/21/2024, Vol. 136 Issue 7, p1-12. 12p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
|