Power Bipolar Devices Based on Silicon Carbide.
| Autor: | Ivanov, P. A.1 Pavel.Ivanov@mail.ioffe.ru, Levinshtein, M. E.1, Mnatsakanov, T. T.2, Palmour, J. W.3, Agarwal, A. K.3 |
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| Zdroj: | Semiconductors. Aug2005, Vol. 39 Issue 8, p861-877. 17p. |
| Databáze: | Academic Search Ultimate |
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