Exploring resistive switching properties and mechanisms in sol-gel derived Gd2Ti2O7 thin films for RRAM applications.

Autor:	Huang, Yu-Hsiang1 (AUTHOR), Huang, Ching-Cheng1 (AUTHOR), Hsu, Tsung-Hsien1 (AUTHOR), Huang, Cheng-Liang1 (AUTHOR) huangcl@mail.ncku.edu.tw
Zdroj:	Materials Science in Semiconductor Processing. Nov2024, Vol. 182, pN.PAG-N.PAG. 1p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect