Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors.
| Autor: | Hu, Yaoqiao1 (AUTHOR), Cho, Kyeongjae1 (AUTHOR) kjcho@utdallas.edu |
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| Zdroj: | Journal of Applied Physics. 7/7/2024, Vol. 136 Issue 1, p1-12. 12p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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