Gate‐Switchable BST Ferroelectric MoS2 FETs for Non‐Volatile Digital Memory and Analog Memristor.

Autor:	Tan, Chao1 (AUTHOR), Wu, Haijuan1 (AUTHOR), Zhao, Minmin1 (AUTHOR), Jili, Xiaobing2 (AUTHOR), Yang, Lei1 (AUTHOR), Gao, Libin2 (AUTHOR), Wang, Zegao1 (AUTHOR) zegao@scu.edu.cn
Zdroj:	Advanced Functional Materials. Jun2024, p1. 8p. 6 Illustrations.
Databáze:	Academic Search Ultimate
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