Gate‐Switchable BST Ferroelectric MoS2 FETs for Non‐Volatile Digital Memory and Analog Memristor.
Autor: | Tan, Chao1 (AUTHOR), Wu, Haijuan1 (AUTHOR), Zhao, Minmin1 (AUTHOR), Jili, Xiaobing2 (AUTHOR), Yang, Lei1 (AUTHOR), Gao, Libin2 (AUTHOR), Wang, Zegao1 (AUTHOR) zegao@scu.edu.cn |
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Zdroj: | Advanced Functional Materials. Jun2024, p1. 8p. 6 Illustrations. |
Databáze: | Academic Search Ultimate |
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