Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact.
| Autor: | Gong, Hehe1,2 (AUTHOR), Sun, Na1 (AUTHOR), Hu, Tiancheng1 (AUTHOR), Yu, Xinxin1 (AUTHOR), Porter, Matthew2 (AUTHOR), Yang, Zineng2 (AUTHOR), Ren, Fangfang1 (AUTHOR), Gu, Shulin1 (AUTHOR), Zheng, Youdou1 (AUTHOR), Zhang, Rong1 (AUTHOR), Zhang, Yuhao2 (AUTHOR) yhzhang@vt.edu, Ye, Jiandong1 (AUTHOR) yejd@nju.edu.cn |
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| Zdroj: | Applied Physics Letters. 6/3/2024, Vol. 124 Issue 23, p1-7. 7p. |
| Databáze: | Academic Search Ultimate |
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